I te wā e tata ana te hangarau semiconductor i runga i te silikene ki āna kaupapa matua, e tere ana te umanga semiconductor o te ao ki te rapu i ngā rauemi rautaki o te whakatū i ngā tikanga o Moore. Ko ngā semiconductor e rua te āhua tūwhera pērā i te molybdenum disulfide (MoS₂), kei te āhua pātea e taea ana te waiho hei rārangi atomic kotahi—e tata ana ki te 0.7 nanometers—e tērā ana hei kaiwhakatū i ngā tikanga mō ngā raupapa i raro i te 1 nanometer. Heoi, ko tā rātou whakamahi i roto i te ao, he wero ā-tau e tū nei: ko te tuhinga i te dielectric poraka i runga i te rauemi ka puta i ngā hapa i te pokanga i waenga i te insulator ultrathin me te semiconductor, ka piki te whakawhiti i ngā eletorona, ka whakaiti i te ngātahi o ngā kairi, me te whakapōtaetanga i te mahi o te transistor.
Hei whakatika i tēnei wero pokanga, nā nā ngā kaipāhotanga i te rōpū Rangahau o TSMC me te Whare Wānanga o National Yang Ming Chiao Tung i hanga he huarahi e mōhiotia ana ko te “pūhanga pokanga epitaxial.” I whakaputahia tēnei rangahau ki te Nature Electronics i te Hōngongoi 2026.
I te mea kāore e hanga he semiconductor hou, he dielectric poraka, nā te rōpū rangahau i whakakāhoretia te pokanga i waenga i ngā rauemi e rua i te taumata atomic. Mā te hangarau ultrahigh-vacuum, nā te rōpū i tuhinga he rārangi ultrathin o te konumohe metala ki runga i te MoS₂ monolayer. I muri mai, ka pātea te konumohe ki te puhi hei hanga i tētahi paparanga konumohe oxidized e tata ana ki te 0.42 nanometers te paihere. I tūtohu tēnei paparanga rārangi pātea i te kāinga hei paparanga buffer kounga teitei, i runga i te waiho ai e ngā kaipāhotanga te hafnium oxide, he rauemi high-k e whakamahia hei dielectric poraka mahi.
Ko te tikanga engineering pokanga i runga i te taumata atomic e tuku ana i ngā painga e rua. Ka pātea te paparanga buffer konumohe ki te uaua o te tuhinga e pā ana ki te kore o ngā pūkete e tū ana i te mata o te MoS₂, e wātea ai he mātauranga tawhito me te whānui ki te tuft o te hafnium oxide. Ka tūmau hoki hei paparanga wehe e whakaiti ana i ngā pānga whakawhiti me ngā pānga tūpure i waenga i te dielectric high-k me te semiconductor e rua te āhua tūwhera, i te tino whakararo i te whakawhiti i ngā eletorona i whakatauhia e te pokanga.
Mā te whakamahi i tēnei tikanga, nā ngā kaipāhotanga i hanga i ngā transistor top-gate e tino pai ana e hāngai ana i runga i te MoS₂ monolayer e tupu ana mā te tuhinga i ngā pāmahana. E whakaatu ana ngā whakaritenga whakamātautau i te te pātea oxidized e tata ana ki te 1 nanometer, e tutuki ana i ngā whakaritenga paerewa teitei o te dielectric poraka. I whakamāramahia hoki te pehi transconductance i te pāti e tino iti ana, e whakamahi ana i te uara teitei o te 0.45 mS/μm, me te nui kāri nuku e iti ana me te pakari o te whakahaere.
Ko te rangahau e tohu ana i te whakamārama tuatahi i ngā taputapu rārangi nui i te taumata atomic e pā ana ki te ngākau e tākiri ana i ngā mēnā mātauranga, te whakahaere kaha, me te ngātahi o ngā kairi teitei. Te tikanga e hanga ana i tētahi papa e taea te whakamahi ki ngā rauemi semiconductor e rua te āhua tūwhera. Ka taea pea te whakauru ki ngā tikanga hangahanga semiconductor e wātea ana me te tautoko i te whakawhanaketanga o ngā hangarau chip i muri i te silikene.